Temperature-Sensitivity Analysis of 1360-nm Dilute-Nitride Quantum-Well Lasers
نویسندگان
چکیده
منابع مشابه
Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
Metalorganic chemical vapor deposition-grown In0.4Ga0.6As0.995N0.005 quantum well ~QW! lasers have been realized, at an emission wavelength of 1.295 mm, with threshold and transparency current densities as low as 211 A/cm ~for L52000 mm! and 75 A/cm, respectively. The utilization of a tensile-strained GaAs0.67P0.33 buffer layer and GaAs0.85P0.15 barrier layers allows a highly-compressively-stra...
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ژورنال
عنوان ژورنال: IEEE Photonics Technology Letters
سال: 2004
ISSN: 1041-1135
DOI: 10.1109/lpt.2004.823715